Improvement of unipolar power device performance using a polarization junction

A concept, polarization junction (PJ), for overcoming the trade-off relationship between the area-specific on-resistance and the breakdown voltage of unipolar power devices is presented. The PJ concept is based on the charge compensation of positive and negative polarization charges at heterointerfaces. The PJ has a similar effect as superjunction without impurity doping. The performance of GaN-based conventional devices and PJ devices have been compared using numerical device simulations. Area-specific on-resistance of PJ devices became less than $1∕10$ than that of conventional devices for the breakdown voltage higher than $300\mathrm{V}$ .