Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers
- 21 October 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (17) , 3251-3253
- https://doi.org/10.1063/1.1516236
Abstract
We report measurements of the near-field of broad-area lasers with quantum dot and quantum well active regions designed to emit at 1 μm. The quantum dot devices exhibit less filamentation than comparable quantum well devices, and exhibit a reduction in filamentation as the injection level is increased. This is consistent with a theory that includes the Coulomb coupling between dot and wetting-layer states on a microscopic level. The theory predicts a linewidth enhancement factor from −3 to 1, depending on carrier density and inhomogeneous broadening.Keywords
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