In-depth Auger analysis of aluminium-silicon interfacial reactions
- 1 August 1975
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 28 (2) , 265-268
- https://doi.org/10.1016/0040-6090(75)90116-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The nature of barrier height variations in alloyed Al-Si Schottky barrier diodesSolid-State Electronics, 1975
- Solid-phase epitaxial growth of Si mesas from al metallizationApplied Physics Letters, 1973
- Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical ProfilesJournal of Vacuum Science and Technology, 1972
- Diffusivity and Solubility of Si in the Al Metallization of Integrated CircuitsApplied Physics Letters, 1971
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Schottky barriers on p-type siliconSolid-State Electronics, 1971