Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0)
- 31 March 1997
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 101 (9) , 715-720
- https://doi.org/10.1016/s0038-1098(96)00656-4
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Undoped semi-insulating GaAs epitaxial layers and their characterizationJournal of Applied Physics, 1994
- Imaging of high field regions in semi-insulating GaAs under biasMaterials Science and Engineering: B, 1994
- Below gap photoreflectance of semi-insulating GaAsJournal of Applied Physics, 1994
- Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectorsJournal of Applied Physics, 1994
- Photocurrent transients in semi-insulating GaAs, effects of EL2 and other defectsJournal of Applied Physics, 1994
- Modeling the behavior of photogenerated charge in semi-insulating GaAsJournal of Applied Physics, 1994
- Electrostatic and current transport properties of n+/semi-insulating GaAs junctionsJournal of Applied Physics, 1993
- Reverse I-V characteristics of Au/semi-insulating InP (100)Semiconductor Science and Technology, 1993
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966