Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor
- 1 March 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (5) , 2559-2563
- https://doi.org/10.1063/1.353065
Abstract
The charging and discharging properties of electron traps created by hot‐carrier injections in the thin gate oxide of n‐channel metal oxide semiconductor transistors are analyzed by means of the effects that charge state transitions induce on the low‐level gate current (lower than 1 pA) of the transistor. This current is measured by a very senstive floating‐gate technique [F.H. Gaensslen and J.M. Aitken, IEEE Electron. Device Lett. EDL‐1, 231 (1980)]. Two traps with electron capture cross sections of the order of 10−14 and 10−15 cm2 are analyzed which are linked with optical and field‐dependent measurements of electron emission properties. Thermal and optical ionization energies of these defects are determined at ≊1.7±0.2 and ≊3.0±0.5 eV, respectively. Comparison with theory suggests that Si dangling bonds or oxygen vacancy in the oxide should be the defects created by hot‐carrier injections.This publication has 18 references indexed in Scilit:
- Properties of hot carrier induced traps in MOSFETs characterized by the floating-gate techniqueSolid-State Electronics, 1992
- Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier agingIEEE Electron Device Letters, 1990
- Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel currentIEEE Transactions on Electron Devices, 1990
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- Optical spectroscopy and field-enhanced emission of an oxide trap induced by hot-hole injection in a silicon metal-oxide-semiconductor field-effect transistorApplied Physics Letters, 1989
- Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETsIEEE Transactions on Electron Devices, 1988
- The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradationIEEE Transactions on Electron Devices, 1987
- Defect mechanisms in a-SiO2Philosophical Magazine Part B, 1985