Layer Splitting by H-Ion Implantation in Silicon: Lower Limit on Layer Thickness?
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-energy random and channeled H ion ranges in Si: Measurements, simulation, and interpretationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Efficient production of silicon-on-insulator films by co-implantation of He+ with H+Applied Physics Letters, 1998
- On the mechanism of the hydrogen-induced exfoliation of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Silicon on insulator material technologyElectronics Letters, 1995
- When are blistering or flaking repetitive?Journal of Nuclear Materials, 1980