Low-threshold GaInP/AlGaInP ridge waveguidelasers
- 25 September 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (20) , 1707-1708
- https://doi.org/10.1049/el:19971165
Abstract
The authors have fabricated low-threshold 670 nm GaInP/AlGaInP ridge waveguide lasers based on a combined dry- and wet-etching technique. Minimum CW threshold currents of 10.4 mA with a differential quantum efficiency of 72% have been obtained for a 2 µm wide and 200 µm long triple quantum well laser. A maximum output power of 23 mW per facet is achieved for this uncoated device. Single transverse mode operation is observed for output powers of up to 14 mW per facet.Keywords
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