Growth of high quality CoSi2/Si - superstructures on Si (111)
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (1) , 27-31
- https://doi.org/10.1016/0749-6036(88)90262-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- On the growth of CoSi2 and CoSi2/Si heterostructures on Si(111)Solid State Communications, 1987
- Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistorJournal of Crystal Growth, 1987
- On the stability of thin epitaxial NiSi2 layers on Si (111)Superlattices and Microstructures, 1986
- Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopyThin Solid Films, 1986
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxyJournal of Vacuum Science & Technology B, 1985
- The effects of nucleation and growth on epitaxy in the CoSi2/Si systemThin Solid Films, 1982
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980