Metalorganic Molecular Beam Epitaxy of Zn1-xCdxSySe1-y Quaternary Alloys on GaAs Substrate
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9B) , L1624
- https://doi.org/10.1143/jjap.30.l1624
Abstract
The successful growth of Zn1-x Cd x S y Se1-y (ZnCdSSe) quaternary alloys by metalorganic molecular beam epitaxy (MOMBE) is reported. Layer-by-layer growth was confirmed for the first time by monitoring the intensity oscillation of a specular beam in a reflection high-energy diffraction (RHEED) pattern. ZnCdSSe layers coherently grown on GaAs exhibited good crystallographic and optical properties.Keywords
This publication has 12 references indexed in Scilit:
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn0.80Cd0.20Se-ZnS0.08Se0.92 Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-xJapanese Journal of Applied Physics, 1991
- Growth of Short-Period ZnSe-ZnSxSe1-x Strained-Layer Superlattices by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Properties of Zn1−xCdxS ternary and Zn1−xCdxS1−ySey quaternary thin films on GaAs grown by OMVPEJournal of Crystal Growth, 1991
- Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substratesApplied Physics Letters, 1990
- Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer StructuresJapanese Journal of Applied Physics, 1990
- Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBEJapanese Journal of Applied Physics, 1990
- Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrateJournal of Crystal Growth, 1990
- Cubic ZnCdS Lattice-Matched to GaAs: A Novel Material for Short-Wavelength Optoelectronic ApplicationsJapanese Journal of Applied Physics, 1989
- Recent advances in the molecular beam epitaxy of the wide-bandgap semiconductor ZnSe and its superlatticesIEEE Journal of Quantum Electronics, 1988