The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF2
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8R) , 909
- https://doi.org/10.1143/jjap.24.909
Abstract
The change in conductivity produced by irradiation with light, the so-called Staebler-Wronski effect (S-W effect), was studied experimentally in a new type of hydro-fluorinated amorphous silicon (s-Si:F:H) prepared from a mixture of the intermediate species SiF2 and gaseous H2. The magnitude of the S-W effect was observed as a function of the light intensity and the Fermi-level position. It was found that the S-W effect in the new a-Si:F:H is much smaller than that in conventional hydrogenated amorphous silicon (s-Si:H) prepared from gaseous SiH4, and that the magnitude of the S-W effect is a function of the substrate temperature during deposition.Keywords
This publication has 5 references indexed in Scilit:
- Impurity doping properties of hydrofluorinated amorphous silicon produced by intermediate species SiF2Journal of Applied Physics, 1985
- A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2Journal of Non-Crystalline Solids, 1983
- Study on Impurity Diffusion in Glow-Discharged Amorphous SiliconJapanese Journal of Applied Physics, 1983
- Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor depositionApplied Physics Letters, 1982
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977