Laser emission due to excitonic recombination processes in high purity GaAs
- 15 September 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 13 (6) , 719-722
- https://doi.org/10.1016/0038-1098(73)90467-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Coulomb Interaction in Semiconductor LasersPhysical Review B, 1972
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Lasing Transitions in p+-n-n+ (AlGa) As–Ga As Heterojunction LasersApplied Physics Letters, 1972
- Optical Gain in Lightly Doped GaAsApplied Physics Letters, 1971
- DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALSApplied Physics Letters, 1971
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964