Improved model for kink effect in AlGaAs/InGaAs heterojunction FET's
- 1 December 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (12) , 2262-2267
- https://doi.org/10.1109/16.337437
Abstract
The kink effect in an AlGaAs/InGaAs HJFET has been investigated with regard to optical wavelength, temperature and gate voltage. The study reveals that the drain current value measured at the drain voltage lower than the kink voltage increases by irradiating white light onto the device, indicating the irradiation-induced kink effect recovery. The degree of the kink disappearance exhibited a significant optical wavelength dependence. We also found that the kink effect is suppressed either by increasing the temperature or by applying a high gate voltage where parallel conduction takes place. Based on these experimental results, we propose an improved model for the kink effect in an AlGaAs/InGaAs HJFET in which the kink effect is closely related to carrier trapping at the hole traps in the AlGaAs donor layer.<>Keywords
This publication has 19 references indexed in Scilit:
- 3 V operation L-band power double-doped heterojunction FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)Journal of Applied Physics, 1991
- A novel electron-beam exposure technique for 0.1-μm T-shaped gate fabricationJournal of Vacuum Science & Technology B, 1990
- Observation and mechanism of kink effect in depletion-mode AlGaAs/GaAs and AlGaAs/GaInAs HEMTsElectronics Letters, 1989
- Ultra-low-noise cryogenic high-electron-mobility transistorsIEEE Transactions on Electron Devices, 1988
- Deep level analysis in heterostructure field-effect transistors by means of the photo-FET methodIEEE Transactions on Electron Devices, 1986
- On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1986
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Resonant Fowler–Nordheim tunneling in n−GaAs-undoped AlxGa1−xAs-n+GaAs capacitorsApplied Physics Letters, 1984
- Electrical measurements on n+-GaAs-undoped Ga0.6Al0.4 As-n-GaAs capacitorsApplied Physics Letters, 1983