Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H– and 6H–SiC for the three distinct Hall measurement configurations: (a) $[{B}\parallel {c},$ ${j}\perp {c}\mathrm{],}$ (b) $[{B}\perp {c},$ ${j}\perp {c}\mathrm{],}$ and (c) $[{B}\perp {c},$ ${j}\parallel {c}\mathrm{],}$ where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H– and 6H–SiC can be explained solely by the anisotropy in the effective electron mass tensors.