Compliant effect of low-temperature Si buffer for SiGe growth
- 22 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (4) , 454-456
- https://doi.org/10.1063/1.1337633
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Low-dislocation relaxed SiGe grown on an effective compliant substrateJournal of Electronic Materials, 2000
- Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxyJournal of Applied Physics, 1996
- Relaxed Si0.7Ge0.3 buffer layers for high-mobility devicesApplied Physics Letters, 1995
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistorsIEEE Electron Device Letters, 1994
- Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxyApplied Physics Letters, 1993
- Elimination of misfit dislocations in Si1−xGex/Si heterostructures by limited-area molecular-beam epitaxial growthJournal of Applied Physics, 1992
- Reduced dislocation density in Ge/Si epilayersApplied Physics Letters, 1991
- A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its pathJournal of Applied Physics, 1990
- A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructuresJournal of Applied Physics, 1989