Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS
- 1 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 345-348
- https://doi.org/10.1016/0167-9317(89)90075-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- 0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHzElectronics Letters, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Microwave characterisation of 1 μm-gate AI 0.48 In 0.52 As/Ga 0.47 In 0.53 As/InP MODFETsElectronics Letters, 1987
- Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorIEEE Electron Device Letters, 1986
- 10-nm resolution electron-beam lithographyJournal of Applied Physics, 1984