GaInAs monolithic photoreceiver integrating p-i-n/JFET with diffused junctions and a resistor
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (10) , 1507-1511
- https://doi.org/10.1109/50.7909
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET'sIEEE Transactions on Electron Devices, 1985
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