The optical properties of wide bandgap binary II–VI superlattices
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 497-500
- https://doi.org/10.1016/0022-0248(92)90800-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Critical thickness of common-anion II–VI strained layer superlattices (SLSs)Journal of Crystal Growth, 1992
- Optical absorption of ZnSe-ZnS strained layer superlatticesApplied Physics Letters, 1991
- The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPEJournal of Crystal Growth, 1990
- Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxyJournal of Crystal Growth, 1990
- Photoluminescence of wide bandgap II–VI superlatticesJournal of Crystal Growth, 1990
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Growth of ZnSe/ZnS strained-layer superlattices on Si substratesJournal of Applied Physics, 1988
- CdS/CdSe strained layer superlattices grown by MOCVDSemiconductor Science and Technology, 1988
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD MethodJapanese Journal of Applied Physics, 1988
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988