Mode-locked pulse operation of GaAs/AlGaAs field effect transistor self-electro-optic effect device smart pixels and saturation considerations
- 12 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (24) , 3108-3110
- https://doi.org/10.1063/1.112451
Abstract
The input/output ports of Smart Pixels are the optical signal receivers and transmitters. We have tested the simplest, lowest power dissipating, receiver-transmitter pair circuit with mode-locked (ML) laser pulses and find switching times as short as 200 ps. We also observe that the product of the set optical energy and switching time is a constant. In addition we present a comparison of the saturation properties of quantum well modulators when operated with short ML pulses, versus bit-period length pulses (quasi-continuous wave operation). Although the read pulse energy requirements of smart pixel optical signal transmitters are near saturation conditions, we conclude that with careful design, operation with short pulses, which gives the minimum switching time, should be possible.Keywords
This publication has 12 references indexed in Scilit:
- 4/spl times/4 arrays of FET-SEED embedded control 2/spl times/1 optoelectronic switching nodes with electrical fan-outIEEE Photonics Technology Letters, 1994
- Optical energy considerations for diode-clamped smart pixel optical receiversIEEE Journal of Quantum Electronics, 1994
- Five-stage free-space optical switching network with field-effect transistor self-electro-optic-effect-device smart-pixel arraysApplied Optics, 1994
- Experimental sensitivity studies of diode-clamped FET-SEED smart-pixel optical receiversIEEE Journal of Quantum Electronics, 1994
- Wavelength dependence of saturation and thermal effects in multiple quantum well modulatorsApplied Physics Letters, 1993
- Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixelsIEEE Journal of Quantum Electronics, 1993
- Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arraysIEEE Journal of Quantum Electronics, 1993
- Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuitIEEE Photonics Technology Letters, 1992
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturationIEEE Journal of Quantum Electronics, 1991
- 33 ps optical switching of symmetric self-electro-optic effect devicesApplied Physics Letters, 1990