High Resolution X-ray Diffraction for the Characterization of Semiconducting Materials

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Abstract
Use of a reference crystal to condition the beam in the double-axis diffractometer permits the Bragg peak width to be reduced to the correlation of the two crystal reflecting ranges. Some recent applications of double axis diffractometry to the study of heteroepitaxial layers are discussed. The advantages of multiple reflections for beam conditioning and the four reflection DuMond monochromator are examined. Glancing incidence and exit diffractometry permits the study of very thin layers, down to a few tens of nanometres in thickness and both synchrotron radiation and skew reflections can be used to tune the glancing angle close to the critical angle. Recent applications of triple-axis diffraction, where an analyzer crystal is used after the specimen, to the study of very thin single epitaxial layers and multiquantum well structures are reviewed.