The energy dispersive x-ray detector: A quantitative model
- 1 September 1985
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 56 (9) , 1772-1779
- https://doi.org/10.1063/1.1138092
Abstract
When a Si(Li) solid-state energy dispersive detector is used to collect x-ray photons with energies below 2 keV the characteristic peaks in the spectrum show significant deviations from the ideal Gaussian shape observed for higher energy photons. This effect is due to incomplete collection of the charge deposited by the incident photon in the diode. The magnitude of this effect, and the resultant distortion of the spectrum, can be computed by means of a Monte Carlo simulation which models the detector in terms of the three parameters which characterize it, junction depth, diffusion length, and surface recombination velocity. For values of these parameters typical of commercial detectors it is found that the incomplete charge correction can be as high as 30% for a line such as N Kα at 400 eV. By matching simulated and experimental spectral shapes, quantitative corrections for each x-ray line of interest can be computed. The results suggest that alternative design strategies for detectors might permit a higher quality of performance to be achieved at low energies.Keywords
This publication has 16 references indexed in Scilit:
- Si(Li) Detector efficiency below 10 keVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Measurement of the low energy tail spectra adjacent to the x-ray photopeak in Si(Li) x-ray detectorsNuclear Instruments and Methods in Physics Research, 1983
- Thin silicon film p-i-n photodiodes with internal reflectionIEEE Transactions on Electron Devices, 1978
- Some aspects of detectors and electronics for X-ray fluorescence analysisNuclear Instruments and Methods, 1977
- Entrance Windows in Germanium Low-Energy X-Ray DetectorsIEEE Transactions on Nuclear Science, 1977
- Application of scanning electron microscopy to determination of surface recombination velocity: GaAsApplied Physics Letters, 1975
- Silicon p-i-n photodetector using internal reflection methodIEEE Transactions on Electron Devices, 1970
- Influence of carrier diffusion effects on window thickness of semiconductor detectorsNuclear Instruments and Methods, 1970
- High-resolution X-ray and electron spectrometerNuclear Instruments and Methods, 1966
- The Characteristics of Very Shallow Silicon JunctionsIEEE Transactions on Nuclear Science, 1966