MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer
- 28 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 145-147
- https://doi.org/10.1016/s0038-1101(96)00155-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperatureApplied Physics Letters, 1994
- Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructureApplied Physics Letters, 1994
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1993
- Current status of GaN and related compounds as wide-gap semiconductorsJournal of Crystal Growth, 1992
- High-Quality InGaN Films Grown on GaN FilmsJapanese Journal of Applied Physics, 1992
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial CrystalsJapanese Journal of Applied Physics, 1983