Growth of HgZnTe by cast-recrystallization
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (2-3) , 237-241
- https://doi.org/10.1016/0022-0248(88)90407-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTeJournal of Crystal Growth, 1988
- Growth of HgZnTe alloy crystals by directional solidificationJournal of Crystal Growth, 1988
- Developments and trends in MBE of II–VI Hg-based compoundsJournal of Crystal Growth, 1987
- Growth and characterization of bulk HgZnTe crystalsJournal of Crystal Growth, 1986
- Growth of single crystals of CdxHg1−xTe by casting perpendicular to the ampoule axis: A temperature gradient recrystallize-anneal techniqueJournal of Crystal Growth, 1985
- Mercury zinc telluride, a new narrow-gap semiconductorApplied Physics Letters, 1985
- Effects influencing the structural integrity of semiconductors and their alloysJournal of Vacuum Science & Technology A, 1985
- A method for routine characterisation of the hole concentration in p-type cadmium mercury tellurideInfrared Physics, 1982
- Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution modelRevue de Physique Appliquée, 1973
- Electrophysical properties of ZnxHg1−x Te alloysPhysica Status Solidi (a), 1971