Electrical Properties of Silicon/Lead Boro-Alumino-Silicate Glass Interfaces. Insulator Charge and Distribution of Interface States Studied by Photovoltage Measurements
- 16 August 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 114 (2) , 579-586
- https://doi.org/10.1002/pssa.2211140220
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Surface-charge properties of fluorine-doped lead borosilicate glassIEEE Transactions on Electron Devices, 1988
- Structural Features at the Si — SiO2 Interface*Zeitschrift für Physikalische Chemie, 1987
- Surface Charge Studies on Lead Borosilicate Glass Containing Trace SodiumJournal of the Electrochemical Society, 1987
- Characterization of Fused Glass Passivation with Selected Diode StructuresJournal of the Electrochemical Society, 1982
- SEMICONDUCTOR SURFACE THEORY CONCEPTSPublished by Elsevier ,1981
- Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulsesJournal of Physics D: Applied Physics, 1979
- Laser light spot mapping of depletion in power semiconductor devicesPhysica Status Solidi (a), 1979
- Passivation Coatings on Silicon DevicesJournal of the Electrochemical Society, 1975
- Determination of surface properties by means of large signal photovoltage pulses and the influence of trappingSurface Science, 1974
- Effect of Temperature and Bias on Glass-Silicon InterfacesIBM Journal of Research and Development, 1964