High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing
- 10 March 2003
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (1) , 22-24
- https://doi.org/10.1109/led.2002.807019
Abstract
High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm/sup 2/, the field effect mobility increased from 71 to 239 cm/sup 2//Vs, and the minimum leakage current reduced from around 3.0/spl times/10/sup -12/ A//spl mu/m to 2.9/spl times/10/sup -13/ A//spl mu/m at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs.Keywords
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