Excimer Laser Crystallisation of Poly-Si TFTs for AMLCDs
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film TransistorsJapanese Journal of Applied Physics, 1998
- Influence of melt depth in laser crystallized poly-Si thin film transistorsJournal of Applied Physics, 1997
- Capillary waves in pulsed excimer laser crystallized amorphous siliconApplied Physics Letters, 1996
- Surface roughness effects in laser crystallized polycrystalline siliconApplied Physics Letters, 1995
- Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si FilmsMRS Proceedings, 1993
- Impact of the gate-drain overlapped device (GOLD) for deep submicrometer VLSIIEEE Transactions on Electron Devices, 1988
- Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brassPhysical Review B, 1983