Effect of hydrogen on the properties of magnetron sputtering of hydrogenated amorphous silicon carbon alloy films
- 15 April 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8) , 2962-2965
- https://doi.org/10.1063/1.337844
Abstract
Hydrogenated amorphous silicon carbon alloy films have been prepared by magnetron sputtering of silicon in methane‐hydrogen‐argon gas mixtures, and the dependence of film properties on hydrogen partial pressure (PH) as well as methane partial pressure against total gas pressure has been investigated. With increasing PH, the concentration of carbon increases, accompanied with the increase in the number of Si–C bonds, in spite of the unchanging partial pressure of methane. Following this, the optical band gap and activation energies of dc conductivities increase, and the photoconductivity as well as the dark conductivity decreases. The intensity of Si–H bonds is almost unchanged, while that of C–H bonds increases. These results are discussed mainly from the standpoint of the change of deposition process composed of the chemical decomposition of methane and the physical sputtering of silicon.This publication has 9 references indexed in Scilit:
- Influence of sputtering pressure on the properties of hydrogenated amorphous-silicon carbon alloy films prepared by magnetron sputtering of silicon in methane-argon gas mixturesJournal of Applied Physics, 1986
- Influence of rf power on the properties of hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering of silicon in methane-argon gas mixturesJournal of Applied Physics, 1985
- Structural, optical and electronic properties of amorphous SiC: H alloys prepared by magnetron sputtering of silicon in methane-argon gas mixturesPhilosophical Magazine Part B, 1985
- Highly photoconductive and photosensitive hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputteringApplied Physics Letters, 1985
- Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gasApplied Physics A, 1984
- Diagnostics and modelling of a methane plasma used in the chemical vapour deposition of amorphous carbon filmsJournal of Physics D: Applied Physics, 1984
- Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputteringJournal of Applied Physics, 1984
- Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous siliconJournal of Applied Physics, 1982
- The temperature dependence f photoconductivity in a-SiJournal of Non-Crystalline Solids, 1974