A nonlinear equivalent circuit for IMPATT diodes
- 1 January 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (1) , 23-26
- https://doi.org/10.1016/0038-1101(76)90127-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Large-Signal Equivalent Circuit for IMPATT-Diode Characterization and Its Application to AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1973
- A Small-Signal and Noise Equivalent Circuit for IMPATT Diodes (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1973
- A current-excited large-signal analysis of IMPATT devices and its circuit implicationsIEEE Transactions on Electron Devices, 1973
- Properties of a New Avalanche Diode Oscillator Computed by a Large-Signal, Self-Consistent SimulationJapanese Journal of Applied Physics, 1971
- Circuit representation of avalanche region of IMPATT diodes for different carrier velocities and ionisation rates of electrons and holesElectronics Letters, 1970
- Large-Signal Silicon and Germanium Avalanche-Diode CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1970
- Large-Signal Equivalent Circuits of Avalanche Transit-Time DevicesIEEE Transactions on Microwave Theory and Techniques, 1970
- Computer-Aided Small-Signal Characterization of IMPATT DiodesIEEE Transactions on Microwave Theory and Techniques, 1969
- Analogue-computer model for an avalanche-diode oscillatorElectronics Letters, 1969
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966