Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
- 1 February 1991
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 6 (2) , 376-384
- https://doi.org/10.1557/jmr.1991.0376
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- InGaP orange light-emitting diodes on Si substratesApplied Physics Letters, 1989
- Buffer layer effects on residual stress in InP on Si substratesApplied Physics Letters, 1989
- GaAs on Si and related systems: Problems and prospectsJournal of Crystal Growth, 1989
- Stress relief in patterned GaAs grown on mismatched substratesJournal of Crystal Growth, 1989
- Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substratesApplied Physics Letters, 1989
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-yJapanese Journal of Applied Physics, 1987
- Stresses in Bi-Metal ThermostatsJournal of Applied Mechanics, 1986
- Efficiency calculations of thin-film GaAs solar cells on Si substratesJournal of Applied Physics, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984