Diffusion of Sb in Strained and Relaxed Si and SiGe

The effect of strain on the vacancy-mediated diffusion of Sb has been investigated by comparing the diffusivities in tensile-strained and relaxed Si and in compressively strained and relaxed S${\mathrm{i}}_{0.91}$G${\mathrm{e}}_{0.09}$. The diffusivity is enhanced by compressive strain and retarded by tensile strain. These experimental observations are in agreement with theoretical predictions by Antonelli and Bernholc [Mater. Res. Soc. Symp. Proc. 163, 523 (1990)] and Cowern et al. [Phys. Rev. Lett. 72, 2585 (1994)].