Deuteron and helium ion channeling in uranium carbide
- 1 September 1970
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 5 (9) , 777-783
- https://doi.org/10.1007/bf00562164
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- On ion implantation in silicon carbidePhysica Status Solidi (a), 1970
- Ion bombardment induced phase transformations and inert gas mobility in the semiconductors Ge, Si, and GaAsRadiation Effects, 1970
- Channeling Studies in Diamond-Type LatticesPhysical Review B, 1969
- Canalisation des deutons dans le quartzJournal of Physics and Chemistry of Solids, 1969
- Channeling in Zinc-Blende Lattices: Energy-Loss Studies for Hydrogen and Helium Ions in InAs, GaSb, AlSb, and InSbPhysical Review B, 1968
- Computer studies of channeling of ions in alkali halide latticesCanadian Journal of Physics, 1968
- Effect of Proton Channeling on the γ-Ray Yield in the 19F(p, αγ)16O ReactionJournal of the Physics Society Japan, 1968
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968
- Channeling in Diamond-Type and Zinc-Blende Lattices: Comparative Effects in Channeling of Protons and Deuterons in Ge, GaAs, and SiPhysical Review B, 1967
- Location of Inert Gas Atoms in KCl, CaF2, and UO2 Crystals by H+ and He2+ ``Channeling'' StudiesJournal of Applied Physics, 1967