Six-Inch Diameter GaAs on Si Wafers
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrateIEEE Electron Device Letters, 1987
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984