Single‐Site Theory of Wannier Excitons in Disordered Semiconductors 11. Numerical Results

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Abstract
The VKE model for semiconducting alloys (mixed crystals) and the point scatterer model with both, a discrete and a continuous distribution of impurity levels as a model for heavily doped and glassy semiconductors, respectively, are considered in a simple parabolic two‐band structure which can be direct and indirect as well. It allows to handle analytically the 𝓀 space integrals occurring in the expression for the dielectric function, which is given in the first part of this paper. In dependence of various parameters 1s exciton lines are calculated in these models mainly in a direct band structure. In the VKE model also indirect bands are studied.