High-speed electron beam annealing of arsenic and gallium implanted silicon
- 16 March 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1) , K73-K75
- https://doi.org/10.1002/pssa.2210640164
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High speed scanning electron beam annealing of ion-implanted silicon layersThin Solid Films, 1980
- Characterisation of multiple-scan electron beam annealing methodElectronics Letters, 1980
- Scanning-electron-beam annealing of arsenic-implanted siliconApplied Physics Letters, 1979
- Pulsed electron beam annealing of ion implanted Si layersRadiation Effects, 1979