Secondary ion mass spectrometry study of lightly doped p-type GaAs films grown by molecular beam epitaxy
- 1 June 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4518-4520
- https://doi.org/10.1063/1.331193
Abstract
Lightly doped p‐type GaAs films grown by molecular beam epitaxy on Cr‐doped substrates have been chemically analyzed using dynamic secondary ion mass spectrometry. Residual levels of Cr are, in general, below 4×1013 cm−3. A major source of impurities in such material is identified. The effect of substrate temperataure on the concentration of B, Mg, Al, Si, Ca, Cr, Mn, Fe, and Cu are reported, and their likely effect upon the minority carier properties of the layers is discussed.This publication has 11 references indexed in Scilit:
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