Growth Mechanism of Silicon Carbide Films by Chemical Vapor Deposition below 1273
- 1 October 1990
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 73 (10) , 3046-3052
- https://doi.org/10.1111/j.1151-2916.1990.tb06714.x
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- X-ray photoelectron spectroscopy study of Si-C film growth by chemical vapor deposition of ethylene on Si(100)Journal of Applied Physics, 1989
- Raman study of SiC fibres made from polycarbosilaneJournal of Materials Science, 1987
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor depositionApplied Physics Letters, 1986
- Mechanism of the silane decomposition. I. Silane loss kinetics and rate inhibition by hydrogen. II. Modeling of the silane decomposition (all stages of reaction)International Journal of Chemical Kinetics, 1985
- Synthesis of continuous silicon carbide fibreJournal of Materials Science, 1983
- X-ray photoelectron spectroscopy and Raman spectroscopy investigations of amorphous SixC1x(H) coatings obtained by chemical vapour deposition from thermally labile organosilicon compoundsThin Solid Films, 1983
- NMR and IR Studies on Hydrogenated Amorphous Si1-xCx FilmsJapanese Journal of Applied Physics, 1982
- Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectraPhilosophical Magazine Part B, 1981
- Formation of Silicon and Titanium Carbides by Chemical Vapor DepositionJournal of the American Ceramic Society, 1968