Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures
- 9 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1548-1550
- https://doi.org/10.1063/1.98631
Abstract
Using the photoluminescence and capacitance-voltage measurements, it has been shown that low-energy electron beam evaporation of Al2O3 on n-type InP induces defects in the interfacial region of the InP-Al2O3 structure. These defects seem to be located as fixed charge traps in the insulator as well as confined within a few hundreds of angstroms of the InP in the interfacial region. By introducing a metallic grid in the path of the evaporating dielectic flux, the substrate was effectively protected from the electron bombardment which resulted in a major improvement of the final metal-insulator-semiconductor device characteristics.Keywords
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