Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- 1 April 1967
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 22 (4) , 1060-1065
- https://doi.org/10.1143/jpsj.22.1060
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963
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- The adsorption of oxygen on clean silicon surfacesJournal of Physics and Chemistry of Solids, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Annealing of Electron Bombardment Damage in Silicon CrystalsPhysical Review B, 1957
- Spin Resonance of Donors in SiliconPhysical Review B, 1954
- Annealing of Bombardment Damage in Germanium: ExperimentalPhysical Review B, 1953