PECVD silicon carbide as a chemically resistant material for micromachined transducers
Open Access
- 1 October 1998
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 70 (1-2) , 48-55
- https://doi.org/10.1016/s0924-4247(98)00111-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperatureThin Solid Films, 1995
- Microfabricated heavy metal ion sensorSensors and Actuators B: Chemical, 1995
- Amorphous silicon carbide and its application in silicon micromachiningSensors and Actuators A: Physical, 1994
- Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge testsJournal of Materials Research, 1994
- Tensiometry and Auger electron spectroscopy studies of the surface of plasma-deposited silicon carbide coatingsThin Solid Films, 1992
- Electronic properties of plasma-deposited films prepared from tetramethylsilaneThin Solid Films, 1992
- Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor depositionThin Solid Films, 1989
- Microhardness and other properties of hydrogenated amorphous silicon carbide thin films formed by plasma-enhanced chemical vapor depositionThin Solid Films, 1983