A new epitaxy technique for device isolation and advanced device structures
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Interface characterization of silicon epitaxial lateral growth over existing SiO/sub 2/ for three-dimensional CMOS structuresIEEE Electron Device Letters, 1989
- The dependence of silicon selective epitaxial growth rates on masking oxide thicknessJournal of Applied Physics, 1989
- Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambientApplied Physics Letters, 1988
- Selective epitaxial growth silicon bipolar transistors for material characterizationIEEE Transactions on Electron Devices, 1988
- Lateral solid phase epitaxy in selectively P-doped amorphous Si filmsApplied Physics Letters, 1986
- A seeded-channel silicon-on-insulator (SOI) MOS technologyIEEE Electron Device Letters, 1985
- The characterization of CVD single-crystal silicon on insulators: Heteroepitaxy and epitaxial lateral overgrowthJournal of Crystal Growth, 1983
- A high-speed buried channel MOSFET isolated by an implanted silicon dioxide layerIEEE Transactions on Electron Devices, 1981