Strain reconstruction of the valence band in Ga1 − xInxSb/GaSb quantum wells
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 270-274
- https://doi.org/10.1016/0039-6028(90)90307-t
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Observation of decoupled heavy and light holes in GaAs-As quantum wells by magnetoreflectivityPhysical Review B, 1988
- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988
- Theory of the hole subband dispersion in strained and unstrained quantum wellsPhysical Review B, 1986
- Calculations of hole subbands in semiconductor quantum wells and superlatticesPhysical Review B, 1985
- Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlatticesSolid State Communications, 1985
- Light-hole conduction in InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955