Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors

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Abstract
The characteristics of low dark current and high sensitivity InGaAsP/InP phototransistors are described. To achieve low dark current, new transistor structure which contains an N-InP emitter, P--InP/p-InGaAsP/P--InP base and N-InP collector structure is employed. In one device which has the current gain of 30 and 500 at incident power of 5 nW and 5 µW, respectively, the lowest dark current of 650 pA (3.6×10-6 A/cm2) at VCE=1 V has been obtained. The dark current of the transistor can be reduced by increasing the P--InP layer thickness at the expense of the current gain.

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