High-sensitivity InGaAsP/InP phototransistors
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 73-75
- https://doi.org/10.1063/1.91706
Abstract
InGaAsP/InP phototransistors have been fabricated using the liquid phase epitaxy technique. In spite of the early stage of development, the fabricated detectors exhibited a current gain of more than 103 and rise time of about 50 nsec. With further development, InGaAsP/InP phototransistors will become promising detectors for optical communication systems in the 1.0–1.7‐μm spectral region.Keywords
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