Leakage current in InGaAsP avalanche photodiodes
- 15 January 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 167-170
- https://doi.org/10.1063/1.91418
Abstract
The increased leakage current in InGaAsP APD’s near breakdown is found to be a rather uniform bulk property, not associated with conventional microplasmas, dislocations, or surface effects. Surface effects were eliminated by the fabrication of guard ring APD’s, but the increased leakage current persisted. Surface effects were further ruled out by a statistical study of the leakage current in a large sample of APD’s. The study shows conclusively that the leakage current is proportional to diode area, not perimeter.Keywords
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