Electromigration and microstructural properties of AI-Si/Ti/AI-Si VLSI metallization
- 1 September 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (5) , 273-277
- https://doi.org/10.1007/bf02659022
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970