Surface chemical states on 3C-SiC/Si epilayers
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 81 (4) , 377-385
- https://doi.org/10.1016/0169-4332(94)90041-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 KSurface Science, 1991
- Differences in Auger electron spectroscopy and x-ray photoelectron spectroscopy results on the bonding states of oxygen with β-SiC(100) surfacesJournal of Applied Physics, 1990
- Improved β-SiC heteroepitaxial films using off-axis Si substratesApplied Physics Letters, 1987
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- The β-SiC(100) surface studied by low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectraJournal of Vacuum Science & Technology A, 1986
- Studies of SiC formation on Si (100) by chemical vapor depositionJournal of Applied Physics, 1985
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Angle-resolved x-ray photoelectron spectroscopyProgress in Surface Science, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983