Inversion charge redistribution model of the high-frequency MOS capacitance
- 31 July 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (7) , 735-742
- https://doi.org/10.1016/0038-1101(74)90098-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysisSolid-State Electronics, 1969
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Semiconductor Surface VaractorBell System Technical Journal, 1962
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955