Improvement in Aging Characteristics by Zn Doping of Electron-Beam Evaporated SrS:Ce Thin-Film Electroluminescent Devices

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Abstract
Aging characteristics of electron-beam evaporated SrS:Ce thin film electroluminescent devices have been improved by using a SrS:Ce and ZnS mixture source pellet. For the Zn-doped device, luminance is maintained at more than 60% of the initial value and threshold voltage remains constant for more than 1000 hours of aging at 500 Hz drive. A rapid decrease in luminance corresponds to a decrease in dynamic space charge, and is reduced by Zn doping. In contrast, a slow decrease in luminance is attributed to a change in the electron emission characteristics of phosphor-insulator interfaces.