Physico-chemical characterization of β-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers
- 1 February 2000
- Vol. 56 (2) , 101-106
- https://doi.org/10.1016/s0042-207x(99)00176-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- γ-In2Se3 thin films obtained by annealing sequentially evaporated In and Se layers in flowing argonVacuum, 1997
- High quality crystalline MoS2 thin films obtained on Ni coated substrates: optimization of the post-annealing treatmentVacuum, 1997
- MOCVD of group III chalcogenidesAdvanced Materials for Optics and Electronics, 1995
- Élaboration à basse température de couches minces D'ln2O3 par évaporation thermique réactive et par évaporation réactive assistée par plasmaJournal de Chimie Physique et de Physico-Chimie Biologique, 1993
- n-Type In2S3 thin films prepared by gas chalcogenization of metallic electroplated indium: Photoelectrochemical characterizationSolar Energy Materials, 1988
- Reactively evaporated films of indium sulphidePhysica Status Solidi (a), 1988
- Optical energy gaps of β-In2S3 thin films grown by spray pyrolysisJournal of Applied Physics, 1986
- On the conduction mechanism in single crystal β-indium sulfide In2S3Journal of Physics and Chemistry of Solids, 1965