GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments
- 30 April 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (4) , 507-510
- https://doi.org/10.1016/0038-1101(95)00190-5
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Passivation of GaAs (100) using selenium sulfideJournal of Applied Physics, 1993
- Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatmentJournal of Applied Physics, 1993
- Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gatesIEEE Electron Device Letters, 1991
- Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactionsJournal of Applied Physics, 1990
- Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1989
- Investigations of ammonium sulfide surface treatments on GaAsJournal of Vacuum Science & Technology B, 1989
- Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1988
- Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAsApplied Physics Letters, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987