Si memory device operated with a small number ofelectronsby using a single-electron-transistor detector
- 8 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (1) , 45-46
- https://doi.org/10.1049/el:19980087
Abstract
A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation.Keywords
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